Search results for " Amorphous silicon"

Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells

2012

We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.

High-efficiency silicon-compatible photodetectors based on Ge quantum dots

2011

We report on high responsivity, broadband metal/insulator/semiconductor photodetectors with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon dioxide matrix. Spectral responsivities between 1-4 A/W are achieved in the 500-900 nm wavelength range with internal quantum efficiencies (IQEs) as high as ∼700%. We investigate the role of a-Ge QDs in the photocurrent generation and explain the high IQE as a result of transport mechanisms via photoexcited QDs. These results suggest that a-Ge QDs are promising for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget. © 2011 Amer…

Plasmonic modes in molybdenum ultra-thin films suitable for hydrogenated amorphous silicon thin film solar cells

2014

We have recently demonstrated that molybdenum ultra-thin films interposed between hydrogenated amorphous silicon (a-Si:H) and SnO2:F transparent conductive oxide (TCO) in thin film solar cells show light trapping effects which enhance the solar cells performances. The effect of this improvement may be attributed to surface plasmon polariton (SPP) modes excited at the molybdenum interface by the solar radiation. In this paper we show direct evidence of such SPP modes in the case of the molybdenum/air interface by using the attenuated total reflection (ATR) technique, pioneered by Kretschmann, and we evaluate the dielectric constant of molybdenum at 660 nm. (C) 2013 The Authors. Published by …

Influence of the electro-optical properties of an a-Si:H single layer on the performances of a pin solar cell

2012

We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependen…

Instabilities Effects in Thin Film Solar Cells: Reversible Ageing, Performance Recovery and Improvement by Electrical Stresses

Structural relaxation of E_gamma centers in amorphous silica

2002

We report experimental evidence of the existence of two variants of the E' gamma centers induced in silica by gamma rays at room temperature. The two variants are distinguishable by the fine features of their line shapes in paramagnetic resonance spectra. These features suggest that the two E' gamma differ for their topology. We find a thermally induced interconversion between the centers with an activation energy of about 34 meV. Hints are also found for the existence of a structural configuration of minimum energy and of a metastable state.

Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells

2011

We have investigated the role of the metal-semiconductor back contact on the performances of thin film modules consisting of single junction a-Si:H photovoltaic (PV) cells deposited with p-i-n configuration. We find that an adequate choice of the back contact helps reducing the barrier height of the junction improving the contact conductivity. For this purpose Mo has shown to be effective. Moreover we find that Mo, as refractory material, has additional beneficial effects reducing the formation of defects leading to the decrease of recombination losses. We have then fabricated a PV module on flexible substrate for indoor energy harvesting applications using Mo as back contact. An efficiency…

Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction

2011

We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …

Vacuum-ultraviolet absorption of amorphous SiO2: intrinsic disorder and role of silanol groups

2008

We present a study on the vacuum-ultraviolet VUV absorption properties of amorphous SiO2 a-SiO2 with high concentrations of silanol groups Si-OH . We found that the absorption spectra are made up of a couple of exponential profiles. The first, in the range from 7.5 to 8.1 eV, was attributed to Si-OH group absorption, while the second, in the range from 8.1 to 8.25 eV, was ascribed to the intrinsic absorption. The VUV absorption cross section of Si-OH groups in a-SiO2 was determined as well. The intrinsic absorption was found to be affected by the Si-OH concentration: high silanol group contents allow lower values of the Urbach energy. This result is interpreted in terms of a reduction in th…

Sturctural disorder and silanol groups content in amorphous SiO2

2009

We present a study on the features of the Urbach edge in amorphous silicon dioxide a-SiO2 . The effects of temperature on the absorption edge in the range from 4 to 300 K were studied in both materials having negligible dry, 1017 cm−3 and significant wet, 1019 cm−3 silanol groups contents. Remarkable differences in the values and in the temperature dependence of the Urbach energy in the dry and wet samples were observed. These differences are interpreted as a consequence of a drastic reduction in the degree of disorder in wet materials, which turn out to be characterized by an electronic structure more similar to that of crystalline quartz. Furthermore, our results indicate that silanol gro…